BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors Jorge Romero-Gonzalez, and Pierre-Emmanuel Gaillardon DOI 10.17023/zj8p-tz59 SSCS Members: Free IEEE Members: Free Non-members: Free Pages/Slides: 9 09 Apr 2018 Tags: open access jorge romero gonzalez silicon nanowire field effect transistor sscs 2018 arithmetic logic gate beyond cmos three independent gate jxcdc sinwfet pierre emmanuel gaillardon gate all around
09 Apr 2018 Tags: open access jorge romero gonzalez silicon nanowire field effect transistor sscs 2018 arithmetic logic gate beyond cmos three independent gate jxcdc sinwfet pierre emmanuel gaillardon gate all around