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Non-members: $15.00Pages/Slides: 28
Abstract: The scaling roadmap of silicon channel MOSFETs is reaching its fundamental limits. In this seminar, we discuss the potential of 2-D materials to break through this barrier thanks to their sub-nm thickness. We go from material to device to circuit level simulation assessment, highlighting benefits for scaled digital, analog and back-end-of-line applications. We conclude with an evaluation of the experimental state-of-the-art and the remaining challenges.