IEEE Members: $8.00
Non-members: $15.00Duration: 1:07:56
Abstract: The scaling roadmap of silicon channel MOSFETs is reaching its fundamental limits. In this seminar, we discuss the potential of 2-D materials to break through this barrier thanks to their sub-nm thickness. We go from material to device to circuit level simulation assessment, highlighting benefits for scaled digital, analog and back-end-of-line applications. We conclude with an evaluation of the experimental state-of-the-art and the remaining challenges.