Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors
Posted: 24 Apr 2015
Authors:
Wenjun Li, Saima Sharmin, Hesameddin Ilatikhameneh, Rajib Rahman, Yeqing Lu, Jingshan Wang, Xiaodong Yan, Alan Seabaugh, Gerhard Klimeck, Debdeep Jena, and Patrick Fay
Pages: 7

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